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Growth and structural characterization of Cu2ZnSnSe4 compound for solar cells1

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Seña, N.
Mesa, F.
Dussan, A.
Gordillo, G.

Fecha
2014

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National Research Council of Canada

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Abstract
This work reports results concerning the effect of the deposition parameters on the structural properties of Cu2ZnSnSe4 thin films, grown through a chemical reaction of the metallic precursors via coevaporation in a three-stage process. X-ray diffraction measurements revealed that the samples deposited by selenization of Cu and Sn grow in the Cu 2Se and SnSe2 phases, respectively. The effect of deposition temperature and Cu/Se mass ratio on the transport properties of Cu2ZnSnSe4 films was analyzed. The electrical behavior of the compound was studied. © 2014 Published by NRC Research Press.
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Deposition , Semiconducting selenium compounds , X ray diffraction , Co-evaporations , Deposition Parameters , Deposition temperatures , Electrical behaviors , Metallic precursor , Structural characterization , Three-stage process , X-ray diffraction measurements , Copper
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