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Study of the growth process and optoelectrical properties of nanocrystalline Cu3BiS3 thin films

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dc.creatorMesa, F.spa
dc.creatorDussan, A.spa
dc.creatorGordillo, G.spa
dc.date.accessioned2020-08-28T15:48:15Z
dc.date.available2020-08-28T15:48:15Z
dc.date.created2010-02-24spa
dc.description.abstractCu3BiS3 thin films were prepared on soda?lime glass substrates by co?evaporation of the precursors in a two?step process; for that, the metallic precursors were evaporated from tungsten crucibles in the presence of elemental sulphur evaporated from a tantalum effusion cell. The films were characterized by spectral transmittance, Atomic Force Microscopy, X?ray Photoelectron Spectroscopy, Scanning Electron Microscopy and electrical measurements to investigate the effect of growth conditions on the optical, morphological and electrical properties. The results revealed that the Cu3BiS3 films present p?type conductivity, a high absorption coefficient (greater than 104 cm–1), and an energy band gap, Eg, of about 1.39 eV. We observed from Atomic Force Microscopy and electrical measurements that grain size and electric conductivity of the Cu3BiS3 samples are influenced by the copper mass ratio in this material. We found, in the high?temperature range above room temperature, that carrier transport is thermally activated with activation energies fluctuating between 0.17 and 0.28 eV. This suggests that this compound has good properties to perform as absorbent layer in thin?film solar cells.eng
dc.format.mimetypeapplication/pdf
dc.identifier.doihttps://doi.org/10.1002/pssc.200982860
dc.identifier.issnISSN: 1862-6351
dc.identifier.issnEISSN: 1610-1642
dc.identifier.urihttps://repository.urosario.edu.co/handle/10336/28462
dc.language.isoengspa
dc.publisherWiley-VCH GmbHspa
dc.relation.citationEndPage920
dc.relation.citationIssueNo. 3-4
dc.relation.citationStartPage917
dc.relation.citationTitlePhysica Status Solidi (c) – Current Topics in Solid State Physics;Special Issue: 23rd International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 23) E?MRS 2009 Spring Meeting, Symposium N – Carbon Nanotubes and Graphene
dc.relation.citationVolumeVol. 7
dc.relation.ispartofPhysica Status Solidi (c) – Current Topics in Solid State Physics, ISSN: 1862-6351;EISSN: 1610-1642, Vol. 7, No. 3-4 (April, 2010) ; pp. 917-920spa
dc.relation.ispartofSpecial issue Special Issue: 23rd International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 23) E?MRS 2009 Spring Meeting, Symposium N – Carbon Nanotubes and Graphenespa
dc.relation.urihttps://onlinelibrary.wiley.com/doi/epdf/10.1002/pssc.200982860spa
dc.rights.accesRightsinfo:eu-repo/semantics/restrictedAccess
dc.rights.accesoRestringido (Acceso a grupos específicos)spa
dc.sourcePhysica Status Solidi (c) – Current Topics in Solid State Physicsspa
dc.sourceSpecial Issue: 23rd International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 23) E?MRS 2009 Spring Meeting, Symposium N – Carbon Nanotubes and Graphenespa
dc.source.instnameinstname:Universidad del Rosario
dc.source.reponamereponame:Repositorio Institucional EdocUR
dc.subject.keywordCu3BiS3spa
dc.subject.keywordNanocrystallinespa
dc.subject.keywordSemiconductor materialsspa
dc.titleStudy of the growth process and optoelectrical properties of nanocrystalline Cu3BiS3 thin filmsspa
dc.title.TranslatedTitleEstudio del proceso de crecimiento y propiedades optoeléctricas de películas delgadas de Cu3BiS3 nanocristalinasspa
dc.typearticleeng
dc.type.hasVersioninfo:eu-repo/semantics/publishedVersion
dc.type.spaArtículospa
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