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TiO2 and Co multilayer thin films via DC magnetron sputtering at room temperature: Interface properties

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dc.creatorQuiroz, Heiddy P.spa
dc.creatorManso-Silván, M.spa
dc.creatorDussan, A.spa
dc.creatorBusó-Rogero, Carlosspa
dc.creatorPrieto, P.spa
dc.creatorMesa, F.spa
dc.date.accessioned2020-05-25T23:56:55Z
dc.date.available2020-05-25T23:56:55Z
dc.date.created2020spa
dc.description.abstractIn this work, we prepared TiO2 and Co multilayer thin films via DC magnetron sputtering method on (100) GaAs and (100) Si substrates. The power for each target (TiO2 and Co), deposition time of the layers, and pressure during deposition were kept constant. From XRD, Raman, and IR measurements, the formation of the rutile and triclinic Co phases were identified in the multilayer thin films. An annealing process was carried in situ on all samples and subsequent to the deposition stage during 2 h. The substrate used was GaAs and Si wafer, favoring the formation and growth of the found phases. The diffusion and interdiffusion of the layers in the thin films were determined from Rutherford Backscattering Spectroscopy (RBS). In particular, Co and Ga were observed to associate after the annealing process according to the depth profiles. Due to the interdiffusion layers, the parallel magnetic contribution is not significant in the bilayer. Curves I-V of the Co/TiO2 bilayer showed the presence of resistive switching, according to the bipolar resistive. A correlation between synthesis parameters and the physical properties of the multilayers is presented. © 2020 Elsevier Inc.eng
dc.format.mimetypeapplication/pdf
dc.identifier.doihttps://doi.org/10.1016/j.matchar.2020.110293
dc.identifier.issn10445803
dc.identifier.urihttps://repository.urosario.edu.co/handle/10336/22558
dc.language.isoengspa
dc.publisherElsevier Inc.spa
dc.relation.citationTitleMaterials Characterization
dc.relation.citationVolumeVol. 163
dc.relation.ispartofMaterials Characterization, ISSN:10445803, Vol.163,(2020)spa
dc.relation.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85082775197&doi=10.1016%2fj.matchar.2020.110293&partnerID=40&md5=04084cb94247691386f2bb236ee90978spa
dc.rights.accesRightsinfo:eu-repo/semantics/openAccess
dc.rights.accesoAbierto (Texto Completo)spa
dc.source.instnameinstname:Universidad del Rosariospa
dc.source.reponamereponame:Repositorio Institucional EdocURspa
dc.subject.keywordCobaltspa
dc.subject.keywordFilm preparationspa
dc.subject.keywordGallium arsenidespa
dc.subject.keywordIII-V semiconductorsspa
dc.subject.keywordInfrared imagingspa
dc.subject.keywordMagnetron sputteringspa
dc.subject.keywordMultilayer filmsspa
dc.subject.keywordOxide mineralsspa
dc.subject.keywordRubidiumspa
dc.subject.keywordRutherford backscattering spectroscopyspa
dc.subject.keywordSemiconducting galliumspa
dc.subject.keywordSilicon wafersspa
dc.subject.keywordSubstratesspa
dc.subject.keywordTitanium dioxidespa
dc.subject.keywordBi-layerspa
dc.subject.keywordDc magnetron sputteringspa
dc.subject.keywordInterdiffusion layerspa
dc.subject.keywordMagnetic contributionspa
dc.subject.keywordMulti-layer thin filmspa
dc.subject.keywordRutilespa
dc.subject.keywordSynthesis parametersspa
dc.subject.keywordTio2spa
dc.subject.keywordMultilayersspa
dc.subject.keywordBilayerspa
dc.subject.keywordMultilayerspa
dc.subject.keywordNVMspa
dc.subject.keywordRBSspa
dc.subject.keywordRutilespa
dc.subject.keywordTio2spa
dc.titleTiO2 and Co multilayer thin films via DC magnetron sputtering at room temperature: Interface propertiesspa
dc.typearticleeng
dc.type.hasVersioninfo:eu-repo/semantics/publishedVersion
dc.type.spaArtículospa
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