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Thermally stimulated conductivity of Cu 3BiS 3 thin films deposited by co-evaporation: Determination of trap parameters related to defects in the gap

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dc.creatorDussan,Aspa
dc.creatorMesa Rodriguez,Fredy Gspa
dc.creatorMurillo,J.Mspa
dc.date.accessioned2020-08-06T16:20:31Z
dc.date.available2020-08-06T16:20:31Z
dc.date.created2012-06-12spa
dc.description.abstractthin films were produced by evaporating precursor Cu and Bi species in sulfur atmosphere through a two-stage process. Thermally stimulated current (TSC) measurements were carried out on as-grown Cu3BiS3 crystals in the temperature range of 150–400 K. The measurements were performed while increasing temperature at a rate of 5 K/min. Analysis of thermal power measurements at room temperature enabled the type of conductivity of the material, respectively. The spectra obtained from the TSC showed the presence of trapping centers associated with the peaks in the current curves as a function of temperature. Transport mechanisms as hopping and thermally active carriers were identified for low- and high-temperature regions, respectively. Three trapping levels around 1.04 eV were detected from the TSC spectra. These levels in Cu3BiS3 crystals may be associated to the presence of structural defects and unintentional impurities during preparation processes. The trap parameters were determined by various analysis methods, and they agree well with each other. A correlation between electrical properties and defects in the material were also studied.eng
dc.format.mimetypeapplication/pdf
dc.identifier.doihttps://doi.org/10.1007/s10853-012-6610-0
dc.identifier.issnISSN: 0022-2461
dc.identifier.issnEISSN: 1573-4803
dc.identifier.urihttps://repository.urosario.edu.co/handle/10336/26045
dc.language.isoengspa
dc.publisherSpringer Naturespa
dc.relation.citationEndPage6692
dc.relation.citationIssueNo. 47
dc.relation.citationStartPage6688
dc.relation.citationTitleJournal of Materials Science, Interface Science
dc.relation.ispartofJournal of Materials Science, Interface Science, ISSN:0022-2461;EISSN:1573-4803, No.47 (2010);pp.6688-6692spa
dc.relation.urihttps://link.springer.com/article/10.1007/s10853-012-6610-0spa
dc.rights.accesRightsinfo:eu-repo/semantics/restrictedAccess
dc.rights.accesoRestringido (Acceso a grupos específicos)spa
dc.sourceJournal of Materials Science, Interface Sciencespa
dc.source.instnameinstname:Universidad del Rosario
dc.source.reponamereponame:Repositorio Institucional EdocUR
dc.subject.keywordTrapping centerspa
dc.subject.keywordThermally stimulate currentspa
dc.subject.keywordFermi temperaturespa
dc.subject.keywordThermally stimulate current spectrumspa
dc.titleThermally stimulated conductivity of Cu 3BiS 3 thin films deposited by co-evaporation: Determination of trap parameters related to defects in the gapspa
dc.title.TranslatedTitleConductividad estimulada térmicamente de películas delgadas de Cu 3BiS 3 depositadas por co-evaporación: Determinación de parámetros de trampa relacionados con defectos en el espaciospa
dc.typearticleeng
dc.type.hasVersioninfo:eu-repo/semantics/publishedVersion
dc.type.spaArtículospa
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