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Transient surface photovoltage of p-type Cu3BiS3

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dc.creatorMesa, F.spa
dc.creatorGordillo, G.spa
dc.creatorDittrich, Th.spa
dc.creatorEllmer, K.spa
dc.creatorBaier, R.spa
dc.creatorSadewasser, S.spa
dc.date.accessioned2020-08-19T14:41:04Z
dc.date.available2020-08-19T14:41:04Z
dc.date.created2010-02-25spa
dc.description.abstractThin films of Cu3BiS3 were prepared by coevaporation. Hall-effect, Seebeck-effect, and surface photovoltage measurements show that Cu3BiS3 is a p-type semiconductor with Hall-mobility, free carrier concentration, and thermo-electric power of 4?cm2/V?s, 2×1016?cm?3, and 0.73 mV/K, respectively. The work function was determined by Kelvin probe force microscopy to be (4.37±0.04)?eV before and (4.57±0.01)?eV after deposition of a thin In2S3 layer. Transient surface photovoltage measurements at variable excitation wavelength showed the importance of defect states below the band gap for charge separation and the opportunity for surface defect passivation by a very thin In2S3 layer. The band bending at the Cu3BiS3/In2S3 interface was obtained. The role of grain boundaries for charge transport and charge separation is discussed.eng
dc.format.mimetypeapplication/pdf
dc.identifier.doihttps://doi.org/10.1063/1.3334728
dc.identifier.issnISSN: 0003-6951
dc.identifier.issnEISSN: 1077-3118
dc.identifier.urihttps://repository.urosario.edu.co/handle/10336/27126
dc.language.isoengspa
dc.publisherAmerican Institute of Physicsspa
dc.relation.citationIssueNo. 8
dc.relation.citationStartPage82113
dc.relation.citationTitleApplied Physics Letters
dc.relation.citationVolumeVol. 96
dc.relation.ispartofApplied Physics Letters, ISSN: 0003-6951;EISSN: 1077-3118, Vol.96, No.8 (2010); pp. 082113spa
dc.relation.urihttps://aip.scitation.org/doi/full/10.1063/1.3334728spa
dc.rights.accesRightsinfo:eu-repo/semantics/restrictedAccess
dc.rights.accesoRestringido (Acceso a grupos específicos)spa
dc.sourceApplied Physics Lettersspa
dc.source.instnameinstname:Universidad del Rosario
dc.source.reponamereponame:Repositorio Institucional EdocUR
dc.subject.keywordCharge transportspa
dc.subject.keywordWork functionsspa
dc.subject.keywordSurface photovoltage measurementsspa
dc.subject.keywordElectronic transportspa
dc.subject.keywordThermoelectric effectsspa
dc.subject.keywordElectronic bandstructurespa
dc.titleTransient surface photovoltage of p-type Cu3BiS3spa
dc.title.TranslatedTitleFotovoltaje superficial transitorio de Cu3BiS3 tipo pspa
dc.typearticleeng
dc.type.hasVersioninfo:eu-repo/semantics/publishedVersion
dc.type.spaArtículospa
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