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Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach

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dc.creatorPura, J. L.spa
dc.creatorAnaya, Juan-Manuelspa
dc.creatorSouto, J.spa
dc.creatorPrieto, A. C.spa
dc.creatorRodríguez, A.spa
dc.creatorRodríguez, T.spa
dc.creatorPeriwal, P.spa
dc.creatorBaron, T.spa
dc.creatorJiménez, J.spa
dc.date.accessioned2020-08-19T14:43:05Z
dc.date.available2020-08-19T14:43:05Z
dc.date.created2018-03-16spa
dc.description.abstractSemiconductor nanowires (NWs) are the building blocks of future nanoelectronic devices. Furthermore, their large refractive index and reduced dimension make them suitable for nanophotonics. The study of the interaction between nanowires and visible light reveals resonances that promise light absorption/scattering engineering for photonic applications. Micro-Raman spectroscopy has been used as a characterization tool for semiconductor nanowires. The light/nanowire interaction can be experimentally assessed through the micro-Raman spectra of individual nanowires. As compared to both metallic and dielectric nanowires, semiconductor nanowires add additional tools for photon engineering. In particular, one can grow heterostructured nanowires, both axial and radial, and also one could modulate the doping level and the surface condition among other factors than can affect the light/NW interaction. We present herein a study of the optical response of group IV semiconductor nanowires to visible photons. The study is experimentally carried out through micro-Raman spectroscopy of different group IV nanowires, both homogeneous and axially heterostructured (SiGe/Si). The results are analyzed in terms of the electromagnetic modelling of the light/nanowire interaction using finite element methods. The presence of axial heterostructures is shown to produce electromagnetic resonances promising new photon engineering capabilities of semiconductor nanowires.eng
dc.format.mimetypeapplication/pdf
dc.identifier.doihttps://doi.org/10.1063/1.5012987
dc.identifier.issnISSN: 0021-8979
dc.identifier.issnEISSN: 1089-7550
dc.identifier.urihttps://repository.urosario.edu.co/handle/10336/27635
dc.language.isoengspa
dc.publisherAmerican Institute of Physicsspa
dc.relation.citationIssueNo. 11
dc.relation.citationStartPage114302
dc.relation.citationTitleJournal of Applied Physics
dc.relation.citationVolumeVol. 123
dc.relation.ispartofJournal of Applied Physics, ISSN: 0021-8979;EISSN: 1089-7550, Vol.123, No.11 (2018); pp. 114302spa
dc.relation.urihttps://aip.scitation.org/doi/10.1063/1.5012987spa
dc.rights.accesRightsinfo:eu-repo/semantics/restrictedAccess
dc.rights.accesoRestringido (Acceso a grupos específicos)spa
dc.sourceJournal of Applied Physicsspa
dc.source.instnameinstname:Universidad del Rosario
dc.source.reponamereponame:Repositorio Institucional EdocUR
dc.subject.keywordElectromagnetismspa
dc.subject.keywordRaman spectroscopyspa
dc.subject.keywordHeterostructuresspa
dc.subject.keywordDopingspa
dc.subject.keywordNanowiresspa
dc.subject.keywordFinite-element analysisspa
dc.titleElectromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approachspa
dc.title.TranslatedTitleEfectos de mejora del campo electromagnético en nanocables semiconductores del grupo IV. Un enfoque de espectroscopía Ramanspa
dc.typearticleeng
dc.type.hasVersioninfo:eu-repo/semantics/publishedVersion
dc.type.spaArtículospa
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