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Junction formation of Cu 3BiS 3 investigated by Kelvin probe force microscopy and surface photovoltage measurements

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dc.creatorMesa, Fredyspa
dc.creatorChamorro, Williamspa
dc.creatorVallejo, Williamspa
dc.creatorBaier, Robertspa
dc.creatorDittrich, Thomasspa
dc.creatorGrimm, Alexanderspa
dc.creatorLux Steriner, Martha Cspa
dc.creatorSadewasser, Saschaspa
dc.date.accessioned2020-08-19T14:44:37Z
dc.date.available2020-08-19T14:44:37Z
dc.date.created2012spa
dc.description.abstractRecently, the compound semiconductor Cu3BiS3 has been demonstrated to have a band gap of ~1.4 eV, well suited for photovoltaic energy harvesting. The preparation of polycrystalline thin films was successfully realized and now the junction formation to the n-type window needs to be developed. We present an investigation of the Cu3BiS3 absorber layer and the junction formation with CdS, ZnS and In2S3 buffer layers. Kelvin probe force microscopy shows the granular structure of the buffer layers with small grains of 20–100 nm, and a considerably smaller work-function distribution for In2S3 compared to that of CdS and ZnS. For In2S3 and CdS buffer layers the KPFM experiments indicate negatively charged Cu3BiS3 grain boundaries resulting from the deposition of the buffer layer. Macroscopic measurements of the surface photovoltage at variable excitation wavelength indicate the influence of defect states below the band gap on charge separation and a surface-defect passivation by the In2S3 buffer layer. Our findings indicate that Cu3BiS3 may become an interesting absorber material for thin-film solar cells; however, for photovoltaic application the band bending at the charge-selective contact has to be increased.eng
dc.format.mimetypeapplication/pdf
dc.identifier.doihttps://doi.org/10.3762/bjnano.3.31
dc.identifier.issnISSN: 2190-4286
dc.identifier.urihttps://repository.urosario.edu.co/handle/10336/27916
dc.language.isoengspa
dc.publisherInstitute for the Advancement of Chemical Sciencesspa
dc.relation.citationEndPage284
dc.relation.citationStartPage277
dc.relation.citationTitleBeilstein Journal of Nanotechnology
dc.relation.citationVolumeVol. 3
dc.relation.ispartofBeilstein Journal of Nanotechnology, ISSN: 2190-4286, Vol.3 (2012); pp. 277-284spa
dc.relation.urihttps://www.beilstein-journals.org/bjnano/content/pdf/2190-4286-3-31.pdfspa
dc.rights.accesRightsinfo:eu-repo/semantics/openAccess
dc.rights.accesoAbierto (Texto Completo)spa
dc.sourceBeilstein Journal of Nanotechnologyspa
dc.source.instnameinstname:Universidad del Rosario
dc.source.reponamereponame:Repositorio Institucional EdocUR
dc.subject.keywordBuffer layerspa
dc.subject.keywordCu3BiS3spa
dc.subject.keywordKelvin probe force microscopyspa
dc.subject.keywordSolar cellsspa
dc.titleJunction formation of Cu 3BiS 3 investigated by Kelvin probe force microscopy and surface photovoltage measurementsspa
dc.title.TranslatedTitleFormación de la unión de Cu 3BiS 3 investigada por microscopía de fuerza de sonda Kelvin y mediciones de fotovoltaje de superficiespa
dc.typearticleeng
dc.type.hasVersioninfo:eu-repo/semantics/publishedVersion
dc.type.spaArtículospa
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