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Effect of substitution of Sn for Bi on structural and electrical transport properties of SnS thin films

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dc.creatorDussan,Aspa
dc.creatorMesa Rodriguez,Fredy Gspa
dc.creatorGordillo,Gspa
dc.date.accessioned2020-08-06T16:20:18Z
dc.date.available2020-08-06T16:20:18Z
dc.date.created2010-01-20spa
dc.description.abstractIn this work, results are reported concerning the effect of the Bi concentration on the structural and electrical transport properties of SnS thin films, grown through a chemical reaction of the metallic precursors with elemental sulfur (sulfurization) in a two-stage process. XRD measurements revealed that the samples deposited by sulfurization of Sn or Bi grow in the SnS and Bi2S3 phases, respectively, whereas those obtained by sulfurization of a Sn:Bi alloy grow with a mixture of several phases. Special emphasis was placed on studying through ? versus T measurements, the effect of the Bi concentration on the transport properties of SnS:Bi films. To identify the dominant transport mechanisms, the ? versus T curves were analyzed in two different temperature ranges. It was also found that in the range of temperatures greater than 300 K, the conductivity is predominantly affected by transport of free carriers in extended states of the conduction band, whereas in the range of temperatures below 250 K, the conductivity is dominated by the VRH (variable range hopping) transport mechanism.eng
dc.format.mimetypeapplication/pdf
dc.identifier.doihttps://doi.org/10.1007/s10853-010-4207-z
dc.identifier.issnISSN: 0022-2461
dc.identifier.issnEISSN: 1573-4803
dc.identifier.urihttps://repository.urosario.edu.co/handle/10336/25952
dc.language.isoengspa
dc.publisherSpringer Naturespa
dc.relation.citationEndPage2407
dc.relation.citationIssueNo. 45
dc.relation.citationStartPage2403
dc.relation.citationTitleJournal of Materials Science, Interface Science
dc.relation.ispartofJournal of Materials Science, Interface Science, ISSN:0022-2461;EISSN:1573-4803, No.45 (2010);pp.2403-2407spa
dc.relation.urihttps://link.springer.com/article/10.1007/s10853-010-4207-zspa
dc.rights.accesRightsinfo:eu-repo/semantics/restrictedAccess
dc.rights.accesoRestringido (Acceso a grupos específicos)spa
dc.sourceJournal of Materials Science, Interface Sciencespa
dc.source.instnameinstname:Universidad del Rosario
dc.source.reponamereponame:Repositorio Institucional EdocUR
dc.subject.keywordMetallic precursorspa
dc.subject.keywordThermoelectric power measurementspa
dc.subject.keywordThin film solar cell technologyspa
dc.titleEffect of substitution of Sn for Bi on structural and electrical transport properties of SnS thin filmsspa
dc.title.TranslatedTitleEfecto de la sustitución de Sn por Bi sobre las propiedades de transporte estructural y eléctrico de las películas delgadas de SnSspa
dc.typearticleeng
dc.type.hasVersioninfo:eu-repo/semantics/publishedVersion
dc.type.spaArtículospa
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