Ítem
Solo Metadatos

On the validity of difusional model in determination of electric transport parameters of semiconductor compound

Mostrar el registro sencillo de la publicación
dc.creatorDussan, A.spa
dc.creatorMesa, F.spa
dc.date.accessioned2020-08-28T15:48:12Z
dc.date.available2020-08-28T15:48:12Z
dc.date.created2014-02spa
dc.description.abstractIn this work we have studied the variable range hopping as a predominant electronic transport mechanism for semiconductor materials used as absorbent layer in photovoltaic devices. Dark conductivity measurements were carried out from 120 to 420 K in Si, Cu3BiS3, SnS, Cu2ZnSnSe4, and CuInGaSe2 thin lms. In the low-temperature range, variational range hopping was established for all samples. Using classical equations from the percolation theory and the difusional model, the density of states near the Fermi level (NF), as well as the hopping parameters (W-activation energy and R hopping range) were calculated. A correlation between both models allowed us to evaluate the validity of the difusional model in semiconductor compounds.eng
dc.format.mimetypeapplication/pdf
dc.identifier.doihttps://doi.org/10.12693/APhysPolA.125.171
dc.identifier.issnISSN: 0587-4246
dc.identifier.issnEISSN: 1898-794X
dc.identifier.urihttps://repository.urosario.edu.co/handle/10336/28442
dc.language.isoengspa
dc.publisherInstitute of Physics Polish Academy of Sciencesspa
dc.relation.citationEndPage173
dc.relation.citationIssueNo. 2
dc.relation.citationStartPage171
dc.relation.citationTitleActa Physica Polonica A;Proceedings of the 3rd International Congress APMAS2013, April 24-28, 2013, Antalya, Turkey
dc.relation.citationVolumeVol. 125
dc.relation.ispartofActa Physica Polonica, ISSN: 0587-4246;EISSN: 1898-794X, Vol. 125, No. 2 (2014); pp. 171-173spa
dc.relation.ispartofProceedings of the 3rd International Congress APMAS2013, (April 24-28, 2013), Antalya, Turkeyspa
dc.relation.urihttp://przyrbwn.icm.edu.pl/APP/PDF/125/a125z2p001.pdfspa
dc.rights.accesRightsinfo:eu-repo/semantics/openAccess
dc.rights.accesoAbierto (Texto Completo)spa
dc.sourceActa Physica Polonica Aspa
dc.sourceProceedings of the 3rd International Congress APMAS2013, April 24-28, 2013, Antalya, Turkeyspa
dc.source.instnameinstname:Universidad del Rosario
dc.source.reponamereponame:Repositorio Institucional EdocUR
dc.subject.keywordTransport mechanismspa
dc.subject.keywordDiffusional modelspa
dc.subject.keywordVRHspa
dc.titleOn the validity of difusional model in determination of electric transport parameters of semiconductor compoundspa
dc.title.TranslatedTitleSobre la validez del modelo difusional en la determinación de los parámetros de transporte eléctrico de compuestos semiconductoresspa
dc.typearticleeng
dc.type.hasVersioninfo:eu-repo/semantics/publishedVersion
dc.type.spaArtículospa
Archivos
Colecciones
Artículos