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Reliability challenges for GaN-based FETs

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dc.creatorKuball, Martinspa
dc.creatorUren, Michael J.spa
dc.creatorPomeroy, James W.spa
dc.creatorKarboyan, Sergespa
dc.creatorChatterjee, Indranilspa
dc.creatorLiu, Dongspa
dc.creatorAnaya, Julianspa
dc.creatorBrazzini, Tommasospa
dc.date.accessioned2020-08-28T15:48:07Z
dc.date.available2020-08-28T15:48:07Z
dc.date.created2016spa
dc.description.abstractGaN-based field effect transistors (FETs) are being developed for microwave and power electronic applications. Presently there are two main aspects that are being considered in the device reliability field: (i) for ultra-high power microwave electronic applications GaN integration with diamond for optimal heat sinking which poses reliability challenges in the integration of dissimilar materials such as related the coefficient in thermal expansion (CTE), and (ii) for power electronic applications the most optimal use of carbon doping of GaN as insulating buffer, as this can result in large dynamic Ron effects, which requires a detailed understanding of the underlying device physics to mitigate potential negative effects of trap states introduced. The latest results in this field will be discussed.eng
dc.format.mimetypeapplication/pdf
dc.identifier.doihttps://doi.org/10.7567/SSDM.2016.N-4-01
dc.identifier.urihttps://repository.urosario.edu.co/handle/10336/28399
dc.language.isoengspa
dc.publisherThe Japan Society of Applied Physicsspa
dc.relation.citationEndPage582
dc.relation.citationStartPage581
dc.relation.citationTitle2016 International Conference on Solid State Devices and Materials
dc.relation.ispartofInternational Conference on Solid State Devices and Materials (2016); pp. 581-582spa
dc.relation.urihttps://confit.atlas.jp/guide/event-img/ssdm2016/N-4-01/public/pdfspa
dc.rights.accesRightsinfo:eu-repo/semantics/openAccess
dc.rights.accesoAbierto (Texto Completo)spa
dc.source2016 International Conference on Solid State Devices and Materialsspa
dc.source.instnameinstname:Universidad del Rosario
dc.source.reponamereponame:Repositorio Institucional EdocUR
dc.subject.keywordGaN-basedspa
dc.subject.keywordPower electronic applicationsspa
dc.titleReliability challenges for GaN-based FETsspa
dc.title.TranslatedTitleDesafíos de confiabilidad para los FET basados ??en GaNspa
dc.typearticleeng
dc.type.hasVersioninfo:eu-repo/semantics/publishedVersion
dc.type.spaArtículospa
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