Ítem
Solo Metadatos
Reliability challenges for GaN-based FETs
Título de la revista
Autores
Kuball, Martin
Uren, Michael J.
Pomeroy, James W.
Karboyan, Serge
Chatterjee, Indranil
Liu, Dong
Anaya, Julian
Brazzini, Tommaso
Fecha
2016
Directores
ISSN de la revista
Título del volumen
Editor
The Japan Society of Applied Physics
Buscar en:
Métricas alternativas
Resumen
Abstract
GaN-based field effect transistors (FETs) are being developed for microwave and power electronic applications. Presently there are two main aspects that are being considered in the device reliability field: (i) for ultra-high power microwave electronic applications GaN integration with diamond for optimal heat sinking which poses reliability challenges in the integration of dissimilar materials such as related the coefficient in thermal expansion (CTE), and (ii) for power electronic applications the most optimal use of carbon doping of GaN as insulating buffer, as this can result in large dynamic Ron effects, which requires a detailed understanding of the underlying device physics to mitigate potential negative effects of trap states introduced. The latest results in this field will be discussed.
Palabras clave
Keywords
GaN-based , Power electronic applications
