Structural, optical and morphological properties of Ga1?xMnxAs thin films deposited by magnetron sputtering for spintronic device applications

Bernal, M.E.; Dussan, A.; Mesa, F.

doi:https://doi.org/10.1016/j.physb.2011.12.067

Ítem

Solo Metadatos

Structural, optical and morphological properties of Ga1?xMnxAs thin films deposited by magnetron sputtering for spintronic device applications

https://repository.urosario.edu.co/handle/10336/28423
https://doi.org/10.1016/j.physb.2011.12.067

Autores

Bernal, M.E.

Dussan, A.

Mesa, F.

Fecha

2012-08-15

Editor

Elsevier

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Abstract

In this work, GaMnAs alloy materials were deposited on 7059 Corning glass and GaAs (1 0 0) substrates via RF magnetron sputtering technique. A concentration of Mn about 0.28 was obtained by Energy Dispersive X-ray spectroscopy. The substrate temperature was changed from 440 to 520 °C and layer thicknesses between 172 and 514 nm were obtained. Characterization by atomic force microscopy and X-ray diffraction were performed to determinate surface morphology and crystal structure, respectively. From transmittance spectral measurements we were able to determine optical constants: band gap energy (Eg), absorption coefficient (?), and refraction index (n). A correlation between morphological properties and substrate type was also studied. Diluted magnetic semiconductors like GaMnAs are considered among promising materials for the development of new spin-electronic devices.